
Typical Electrical Characteristics (continued)
2N7000 / 2N7002 /NDS7002A
1.1
2
1.075
I D = 250μA
1
V GS = 0V
0 .5
1.05
T J = 1 2 5 ° C
1.025
1
0.975
0.95
0 .1
0 .0 5
0 .0 1
0 .0 0 5
25°C
-5 5 ° C
0.925
-50
-25
0 25 50 75 100
T J , JUNCTION TEM PERATURE (°C)
125
150
0 .0 0 1
0 .2
0 .4
V SD
0 .6 0 .8 1 1 .2
, BODY DIODE FORW A RD VOLTAGE (V)
1 .4
60
40
20
Figure 7. Breakdown Voltage Variation
with Temperature
C iss
Figure 8. Body Diode Forward Voltage Variation with
10
V DS = 2 5 V
8
10
5
C oss
C rss
6
4
I D = 5 0 0 m A
2
f = 1 MHz
V GS = 0V
2
280m A
115m A
1
0
1
2
3
5
10
20
30
50
0
0 .4
0 .8
1 .2
1 .6
2
V DS
, DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)
Figure 9. Capacitance Characteristics
Figure 10. Gate Charge Characteristics
V DD
t on
t off
t d(on)
t r
t d(off)
t f
V IN
R L
90%
90%
V GS
R GEN
G
D
DUT
V OUT
Output, Vout
Input, Vin
10%
50%
50%
10%
90%
Inverted
S
10%
Pulse Width
Figure 11.
Figure 12. Switching Waveforms
2N7000.SAM Rev. A1